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EDC

от lakkoju B. 417,605 KB • 60 файлов

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GATE 2014 ECE Equillibrium electron and hole concentrations, Mass Action Law.mp4

GATE 2014 ECE Equillibrium electron and hole concentrations, Mass Action Law.mp4

GATE 2014 ECE Hole diffusion constant of semiconductor.mp4

GATE 2014 ECE Hole diffusion constant of semiconductor.mp4

GATE 2014 ECE If the emitter resistance in Common Emitter (CE) amplifier is not .mp4

GATE 2014 ECE If the emitter resistance in Common Emitter (CE) amplifier is not .mp4

GATE 2014 ECE In MOSFET fabrication, the channel length is defined during the pr.mp4

GATE 2014 ECE In MOSFET fabrication, the channel length is defined during the pr.mp4

GATE 2014 ECE Mass Action Law, semiconductor doped with both donors and acceptor.mp4

GATE 2014 ECE Mass Action Law, semiconductor doped with both donors and acceptor.mp4

GATE 2014 ECE Matching input impedance of Common Base (CB) amplifier to impedanc.mp4

GATE 2014 ECE Matching input impedance of Common Base (CB) amplifier to impedanc.mp4

GATE 2014 ECE Operating region of Transistor circuit given.mp4

GATE 2014 ECE Operating region of Transistor circuit given.mp4

GATE 2014 ECE Recombination rate of P type semiconductor is directly proportiona.mp4

GATE 2014 ECE Recombination rate of P type semiconductor is directly proportiona.mp4

GATE 2014 ECE Resistance value of N channel Depletion mode MOSFET in linear regi.mp4

GATE 2014 ECE Resistance value of N channel Depletion mode MOSFET in linear regi.mp4

GATE 2014 ECE Shallow P well and N well regions in CMOS technology can be formed.mp4

GATE 2014 ECE Shallow P well and N well regions in CMOS technology can be formed.mp4

GATE 2014 ECE slope of intrinsic resistivity and temperature.mp4

GATE 2014 ECE slope of intrinsic resistivity and temperature.mp4

GATE 2014 ECE Slope of N channel MOSFET in saturation region.mp4

GATE 2014 ECE Slope of N channel MOSFET in saturation region.mp4

GATE 2014 ECE Transconductance of BJT.mp4

GATE 2014 ECE Transconductance of BJT.mp4

GATE 2014 ECE Value of drain current in the MOSFET circuit shown.mp4

GATE 2014 ECE Value of drain current in the MOSFET circuit shown.mp4

GATE 2014 ECE when MOSFET switches from saturation to linear region.mp4

GATE 2014 ECE when MOSFET switches from saturation to linear region.mp4

GATE 2015 DC analysis of Amplifier using PNP transistor.mp4

GATE 2015 DC analysis of Amplifier using PNP transistor.mp4

GATE 2015 ECE find the value of Channel Length Modulation of NMOS FET.mp4

GATE 2015 ECE find the value of Channel Length Modulation of NMOS FET.mp4

GATE 2015 ECE Conductivity of N type semiconductor.mp4

GATE 2015 ECE Conductivity of N type semiconductor.mp4

GATE 2015 ECE Current in the 4 kohm resistor of given bridge circuit.mp4

GATE 2015 ECE Current in the 4 kohm resistor of given bridge circuit.mp4

GATE 2015 ECE Electric Field profile in the depletion region of PN junciton.mp4

GATE 2015 ECE Electron Current density of Semiconductor.mp4

GATE 2015 ECE Electron Current density of Semiconductor.mp4

GATE 2015 ECE Generation rate, Minority carrier life time.mp4

GATE 2015 ECE Generation rate, Minority carrier life time.mp4

GATE 2015 ECE If base width in BJT is doubled then.mp4

GATE 2015 ECE If base width in BJT is doubled then.mp4

GATE 2015 ECE Maximum Emitter Current of BJT in foward active region.mp4

GATE 2015 ECE Maximum Emitter Current of BJT in foward active region.mp4

GATE 2015 ECE Output resistance of MOSFET in saturation region.mp4

GATE 2015 ECE Output resistance of MOSFET in saturation region.mp4

GATE 2015 ECE Relation between drain current and varying source voltage.mp4

GATE 2015 ECE Relation between drain current and varying source voltage.mp4

GATE 2015 ECE Resistivity of N Type semiconductor.mp4

GATE 2015 ECE Resistivity of N Type semiconductor.mp4

GATE 2015 ECE Shape of Output for the given sine wave input.mp4

GATE 2015 ECE Shape of Output for the given sine wave input.mp4

GATE 2015 ECE Transit Time of a charge carrier.mp4

GATE 2015 ECE Transit Time of a charge carrier.mp4

GATE 2015 ECE Transition capacitance of PN junction at a given Reverse Bias volt.mp4

GATE 2015 ECE Transition capacitance of PN junction at a given Reverse Bias volt.mp4

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