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EDC

by lakkoju B.
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60 files • 417,605 KB
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05:10
GATE 2011 ECE Effect of temperature on diode forward voltage.mp4
05:10
mp4
5,306 KB
lakkoju B. in EDC
5,306 KB
6 years ago
lakkoju B.
02:40
GATE 2015 ECE Resistivity of N Type semiconductor.mp4
02:40
mp4
2,558 KB
lakkoju B. in EDC
2,558 KB
6 years ago
lakkoju B.
04:58
GATE 2014 ECE Built in potential and width of depletion region of abrupt PN junc.mp4
04:58
mp4
6,831 KB
lakkoju B. in EDC
6,831 KB
6 years ago
lakkoju B.
13:24
GATE 2014 ECE Energy band diagram of biased N type semiconductor.mp4
13:24
mp4
15,545 KB
lakkoju B. in EDC
15,545 KB
6 years ago
lakkoju B.
16:31
GATE 2011 ECE Transistor as a switch, time required to come out of active region.mp4
16:31
mp4
20,363 KB
lakkoju B. in EDC
20,363 KB
6 years ago
lakkoju B.
02:32
GATE 2015 ECE Generation rate, Minority carrier life time.mp4
02:32
mp4
2,299 KB
lakkoju B. in EDC
2,299 KB
6 years ago
lakkoju B.
07:54
GATE 2015 ECE Electron Current density of Semiconductor.mp4
07:54
mp4
8,810 KB
lakkoju B. in EDC
8,810 KB
6 years ago
lakkoju B.
05:55
GATE 2015 ECE Transition capacitance of PN junction at a given Reverse Bias volt.mp4
05:55
mp4
5,678 KB
lakkoju B. in EDC
5,678 KB
6 years ago
lakkoju B.
05:48
GATE 2014 ECE Mass Action Law, semiconductor doped with both donors and acceptor.mp4
05:48
mp4
6,509 KB
lakkoju B. in EDC
6,509 KB
6 years ago
lakkoju B.
11:54
GATE 2012 ECE Gate source overlap capacitance, source body junction capacitance.mp4
11:54
mp4
13,942 KB
lakkoju B. in EDC
13,942 KB
6 years ago
lakkoju B.
04:42
GATE 2013 ECE Design of self bias circuit, Transitor biasing.mp4
04:42
mp4
5,479 KB
lakkoju B. in EDC
5,479 KB
6 years ago
lakkoju B.
03:28
GATE 2015 ECE Transit Time of a charge carrier.mp4
03:28
mp4
3,890 KB
lakkoju B. in EDC
3,890 KB
6 years ago
lakkoju B.
05:54
GATE 2014 ECE Cutoff wavelength of Gallium Arsenide (GaAs).mp4
05:54
mp4
6,988 KB
lakkoju B. in EDC
6,988 KB
6 years ago
lakkoju B.
02:02
GATE 2011 ECE Common Emitter collector current in active region.mp4
02:02
mp4
2,476 KB
lakkoju B. in EDC
2,476 KB
6 years ago
lakkoju B.
05:46
GATE 2010 ECE In a uniformly doped BJT, relation among base, emitter and collect.mp4
05:46
mp4
6,522 KB
lakkoju B. in EDC
6,522 KB
6 years ago
lakkoju B.
03:17
GATE 2011 ECE Drift current in semiconductors depends on.mp4
03:17
mp4
3,855 KB
lakkoju B. in EDC
3,855 KB
6 years ago
lakkoju B.
07:00
GATE 2014 ECE when MOSFET switches from saturation to linear region.mp4
07:00
mp4
8,611 KB
lakkoju B. in EDC
8,611 KB
6 years ago
lakkoju B.
06:58
GATE 2011 ECE when used in voltage stabilization circuits, zener diode is biased.mp4
06:58
mp4
9,012 KB
lakkoju B. in EDC
9,012 KB
6 years ago
lakkoju B.
07:58
GATE 2012 ECE Voltage across the diode.mp4
07:58
mp4
8,875 KB
lakkoju B. in EDC
8,875 KB
6 years ago
lakkoju B.
07:51
GATE 2010 ECE Gate oxide in a CMOS process is preferably grown using.mp4
07:51
mp4
8,455 KB
lakkoju B. in EDC
8,455 KB
6 years ago
lakkoju B.
15:31
GATE 2011 ECE JFET channel resistance and channel thickness relation.mp4
15:31
mp4
16,829 KB
lakkoju B. in EDC
16,829 KB
6 years ago
lakkoju B.
08:12
GATE 2011 ECE Output voltage of given NMOS circuit.mp4
08:12
mp4
9,732 KB
lakkoju B. in EDC
9,732 KB
6 years ago
lakkoju B.
03:26
GATE 2014 ECE Transconductance of BJT.mp4
03:26
mp4
3,615 KB
lakkoju B. in EDC
3,615 KB
6 years ago
lakkoju B.
04:28
GATE 2014 ECE Value of drain current in the MOSFET circuit shown.mp4
04:28
mp4
4,913 KB
lakkoju B. in EDC
4,913 KB
6 years ago
lakkoju B.
03:02
GATE 2014 ECE In MOSFET fabrication, the channel length is defined during the pr.mp4
03:02
mp4
3,294 KB
lakkoju B. in EDC
3,294 KB
6 years ago
lakkoju B.
03:17
GATE 2015 ECE find the value of Channel Length Modulation of NMOS FET.mp4
03:17
mp4
3,879 KB
lakkoju B. in EDC
3,879 KB
6 years ago
lakkoju B.
09:06
GATE 2012 ECE Operating regions of CMOS inverter.mp4
09:06
mp4
10,223 KB
lakkoju B. in EDC
10,223 KB
6 years ago
lakkoju B.
05:54
GATE 2015 ECE Relation between drain current and varying source voltage.mp4
05:54
mp4
6,350 KB
lakkoju B. in EDC
6,350 KB
6 years ago
lakkoju B.
04:17
GATE 2015 DC analysis of Amplifier using PNP transistor.mp4
04:17
mp4
3,718 KB
lakkoju B. in EDC
3,718 KB
6 years ago
lakkoju B.
04:11
GATE 2010 ECE As doping on both sides of a PN junction increases,.mp4
04:11
mp4
5,220 KB
lakkoju B. in EDC
5,220 KB
6 years ago
lakkoju B.
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